The Application of IGBT in New Energy Vehicles

-Technical Principles and Current Development Status in China

1. Background and Overview of the Research

1.1 Definition and Importance of IGBT

IGBT (Insulated Gate Bipolar Transistor) is a composite power semiconductor device that combines the advantages of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and BJT (Bipolar Junction Transistor). It features the high input impedance, low drive power, and rapid switching characteristics of MOSFETs, along with the high voltage and large current carrying capability of BJTs. It is a core component in modern power electronic systems for efficient energy conversion, control, and transmission. In strategic emerging industries such as new energy vehicles, photovoltaic energy storage, and smart grids, IGBT acts as a crucial component, akin to the “central nervous system,” and can be considered the “heart” of power electronic systems.

In the field of new energy vehicles, IGBT modules are the core components of the electric drive system, accounting for about 50% of the cost of the motor drive system, while the motor drive system accounts for 15%-20% of the total vehicle cost. This means that IGBT modules account for approximately 7%-10% of the total vehicle cost, making them the second largest cost component after batteries. Additionally, the performance of IGBT directly determines the energy efficiency, range, and power performance of new energy vehicles. Therefore, mastering core IGBT technology is crucial for enhancing the competitiveness of the new energy vehicle industry.

1.2 Research Objectives and Scope

This research aims to comprehensively analyze the application principles and technical characteristics of IGBT in new energy vehicles from a technical development perspective, focusing on the current development status and technological level of IGBT in China. The specific research scope includes:
1. Basic structure, working principles, and key technical characteristics of IGBT
2. Application mechanisms and technical advantages of IGBT in the electric drive system of new energy vehicles
3. Development history, market scale, and competitive landscape of the IGBT industry in China
4. Evaluation of China’s IGBT technological level and analysis of international gaps
5. China’s IGBT industry policy environment and future development trends

This research focuses on the Chinese region, analyzing the overall development of the IGBT industry without targeting specific car companies or product models. The research timeline is based on the latest data from 2025 to ensure the timeliness and foresight of the analysis.

2. Technical Principles and Working Mechanism of IGBT

2.1 Physical Structure and Working Principle of IGBT

2.1.1 Four-layer and Three-terminal Structure Design
The core of IGBT is a four-layer and three-terminal semiconductor structure (taking N-channel IGBT as an example). This design is key to achieving high drive efficiency and large power capability. The specific structure includes:
1. Four-layer semiconductor material (PNPN structure):
– Collector (C): P+ heavily doped layer, connected to the positive terminal of a high-voltage DC power supply
– N- drift region: low-doped N-type layer, bears the main voltage (core of voltage withstand capability)
– P base region: medium-doped P-type layer, located below the gate
– Emitter (E): N+ heavily doped layer, connected to the low-voltage side (ground or negative power terminal)
2. Functions of the three electrodes:
– Gate (G): Insulated gate structure (silicon dioxide layer isolation), controls the conductive channel through a voltage signal
– Collector (C) and Emitter (E): form the main current path, carrying high voltage and large current

This four-layer structure design allows IGBT to achieve energy conversion from “small to large” through the gate’s small signal control of the large current on-off between the collector and emitter.

2.1.2 Conduction Process and Mechanism
The conduction process of IGBT can be divided into two stages: “MOSFET channel opening” and “BJT-style bipolar conduction,” achieving the effect of low-voltage control of high voltage:
1. Gate positive voltage trigger (VGE>Vth):
– When the gate voltage exceeds the threshold voltage (typically 4-6V), an N-type inversion layer forms on the surface of the P base region below the gate (similar to the conductive channel of a MOSFET)
– This channel connects the N- drift region and the emitter, allowing electrons to flow from the emitter to the N- region
2. Electron injection and conductivity modulation effect:
– After electron injection into the N- region, it triggers the injection of holes from the P base region into the N- region (conductivity modulation effect)
– This causes the resistivity of the high-resistance N- region to drop sharply, allowing it to carry a large current of up to thousands of amperes
3. Current path:
– When conducting, the current path is: Collector (P+) → N- drift region (low-resistance state) → P base region → Gate channel → Emitter (N+)
– At this point, the IGBT is equivalent to a “MOSFET-driven BJT,” where the MOSFET part is responsible for voltage control, and the BJT part is responsible for large current amplification

The typical conduction voltage drop (VCE (sat)) of IGBT is 1-3V (much lower than BJT’s 5V), resulting in lower losses; the switching frequency is 1-20kHz, balancing efficiency and stability (better than BJT’s <1kHz, lower than MOSFET’s 100kHz+).

2.1.3 Turn-off Process and Mechanism
When the gate voltage drops below the threshold (VGE<Vth), IGBT enters the turn-off process, which is divided into two stages:
1. Channel closure and stored charge release:
– The MOSFET part turns off first: the gate channel disappears, cutting off electron injection from the emitter to the N- region
– N- region stored holes recombine: the remaining holes must gradually disappear through recombination or return to the P base region, forming tail current Itail (minority carrier storage effect)
2. Turn-off losses and optimization:
– Tail losses: account for 30%-50% of total switching losses, a major challenge in high-frequency scenarios (SiC MOSFETs do not have this issue)
– Engineering countermeasures: optimize N- region thickness and doping concentration to shorten carrier recombination time; design “dead time” (5-10μs) to avoid bridge circuit upper and lower tube direct short circuit; add RCD snubber circuit to suppress voltage spikes during turn-off

The core logic of turn-off is: gate voltage drop → channel disappearance → electron injection stop → hole recombination → current gradually returns to zero.

2.2 Core Operating Characteristics of IGBT

2.2.1 Drive Characteristics and Advantages
As a voltage-controlled device, IGBT’s drive characteristics are key advantages over BJT:
1. Voltage drive: only requires 5-15V gate voltage to turn on, with input impedance as high as 10^9Ω, making the drive circuit simple (only requires voltage divider resistors + driver chip)
2. Low drive power: drive current is only on the nanoamp level, compared to BJT’s milliamp-level drive current, resulting in over 100 times improvement in energy efficiency
3. Low drive circuit complexity: no need for complex current drive circuits like BJT, simplifying system design

These characteristics make IGBT simpler and more efficient in drive circuit design, significantly reducing system costs and power consumption.

2.2.2 Current-Voltage Relationship and Operating Regions
IGBT has three main operating regions, characterized as follows:
– Operating Region: Cut-off Region
– Condition: VGEVCES
– Description: Avalanche breakdown occurs, over-voltage protection circuit required

The safe operating area of IGBT is wider than BJT, allowing it to work stably under various conditions.

2.2.3 Temperature Characteristics and Stability
IGBT’s temperature characteristics are crucial for its application in new energy vehicles:
1. Positive temperature coefficient: conduction voltage drop VCE (sat) increases with temperature rise, achieving automatic current sharing when paralleled (higher temperature → higher resistance → lower current)
2. Negative temperature coefficient: threshold voltage Vth decreases with temperature rise, requiring attention to the risk of false conduction at high temperatures

These characteristics provide IGBT with good current sharing characteristics in parallel applications, but require special attention to threshold voltage changes in high temperature environments to ensure reliable operation.

2.3 Performance Comparison of IGBT with Other Power Devices

Compared to traditional power devices such as MOSFET and BJT, IGBT has significant comprehensive advantages:

IGBT’s comprehensive advantages in voltage tolerance, drive characteristics, and conduction loss make it the preferred device in 600V and above medium-high voltage application scenarios. Especially in high-power applications such as new energy vehicles, IGBT’s comprehensive performance far surpasses other traditional power devices.

3. Analysis of IGBT Application in New Energy Vehicles

3.1 Overview of New Energy Vehicle Electric Drive Systems

3.1.1 Components and Functions of Electric Drive Systems
In new energy vehicles, the electric drive system is the core system that converts electrical energy into mechanical energy, mainly consisting of the following parts:
1. Three Electric Systems: Namely, the power battery (referred to as the battery), drive motor (referred to as the motor), and motor controller (referred to as the control), which are the core components determining the vehicle’s performance, accounting for over 70% of the total cost of new energy vehicles.
2. Components of the Electric Drive System:
– Drive Motor Assembly: Converts the electrical energy from the power battery into rotational mechanical energy, serving as the source of power output
– Controller Assembly: Based on hardware and software design of power semiconductors, it performs real-time control of the drive motor’s operating status
– Transmission Assembly: Uses gears to reduce output speed and increase output torque, ensuring the electric drive system continuously operates in an efficient range
3. Multi-in-one Electric Drive System:
– With technological advancements, the motor, control, and reducer have been integrated into a single component, forming a “three-in-one electric drive”
– The purpose of integration is mainly to save space, reduce weight, enhance performance, and lower costs

The basic working principle of the electric drive system is: When driving a new energy vehicle, the motor controller converts the direct current (DC) released by the power battery into alternating current (AC) (a process known as inversion), allowing the drive motor to operate. The motor converts electrical energy into mechanical energy, which is then transmitted through the transmission system (mainly the reducer) to make the car’s wheels run. Conversely, converting the wheels’ mechanical energy back into stored battery energy is called kinetic energy recovery.

3.1.2 Power Conversion Requirements in Electric Drive Systems
The electric drive system of new energy vehicles faces complex power conversion requirements, primarily including:
1. Main Drive Inversion: Converts the direct current from the power battery into three-phase alternating current to drive the motor
2. Energy Recovery: Converts mechanical energy generated during braking into electrical energy and feeds it back to the battery through rectification
3. Voltage Conversion: Performs energy conversion between systems of different voltage levels, such as from high-voltage battery to low-voltage auxiliary systems
4. Power Management: Manages and controls the onboard power system to ensure stable power supply to each system

These conversion processes require efficient and reliable power semiconductor devices, and IGBT, with its excellent performance characteristics, becomes the ideal choice for the electric drive systems of new energy vehicles.

3.2 Core Application Scenarios of IGBT in New Energy Vehicles

3.2.1 IGBT Application in Motor Drive Systems
In the motor drive system of new energy vehicles, IGBT modules are core components of the inverter, responsible for the critical task of converting direct current into alternating current:
1. Main Inverter:
– IGBT modules serve as the core components of the main inverter, converting direct current output from the power battery into alternating current to drive the operation of a three-phase motor
– During this process, IGBT performs high-frequency switching actions to precisely control the motor’s speed and torque, achieving vehicle acceleration, deceleration, and driving direction control
2. Motor Control Principle:
– By treating a single IGBT chip as an ideal switch, utilizing the on-off characteristics of semiconductors
– Within the module, a combination of parallel and serial IGBT chip units is formed, allowing different switching combinations to rapidly change the direction and frequency of the current, thereby outputting the required alternating current
3. Power Output Control:
– The rapid switching characteristics of IGBT enable more precise motor control and faster response speeds
– It can achieve smooth motor start, stop, and speed change, enhancing driving comfort and power performance

IGBT’s application in motor drive systems directly affects the power performance and energy efficiency of new energy vehicles, making it one of the core technologies of electric drive systems.

3.2.2 IGBT Application in Onboard Charging and Power Management Systems
In addition to main drive systems, IGBT also plays a significant role in the charging and power management systems of new energy vehicles:
1. Onboard Charger (OBC):
– In onboard chargers, IGBT participates in the process of converting 220V alternating current into direct current to charge high-voltage batteries
– By precisely controlling charging current and voltage, it ensures safe and efficient battery charging
2. DC-DC Converter:
– IGBT is used to convert direct current from high-voltage batteries into low-voltage direct current, powering onboard low-voltage systems (such as lighting, air conditioning, control systems, etc.)
– It achieves energy conversion and management between systems of different voltage levels
3. Auxiliary Power Systems:
– In auxiliary systems like onboard air conditioning and electronic power steering, IGBT is used to control motor operation
– It provides precise control of auxiliary systems, improving overall vehicle energy efficiency and comfort

In these application scenarios, IGBT’s efficient switching characteristics and precise control capabilities provide stable and reliable power solutions for new energy vehicles.

3.2.3 IGBT Application in Energy Recovery Systems
The energy recovery system of new energy vehicles is an important link in improving energy efficiency, and IGBT plays a key role in this process:
1. Brake Energy Recovery:
– When the vehicle decelerates or descends, the motor switches to generator mode, converting mechanical energy into electrical energy
– IGBT modules convert the alternating current generated by the motor into direct current and feed it back to the battery for storage
– By precisely controlling the intensity and speed of energy recovery, it achieves optimal energy recovery efficiency
2. Energy Recovery Efficiency:
– The rapid switching characteristics and low conduction loss of IGBT make the energy recovery process more efficient
– By optimizing IGBT’s control strategy, higher energy recovery efficiency can be achieved, extending the vehicle’s range
3. System Integration Optimization:
– In some advanced electric drive systems, IGBT modules are responsible for both drive and energy recovery functions, enhancing system integration and efficiency
– Through intelligent control algorithms, seamless switching between drive and recovery modes is achieved

IGBT’s application in energy recovery systems significantly improves the energy utilization efficiency of new energy vehicles, making it a key technology for extending range.

3.3 Performance Advantages of IGBT in New Energy Vehicles

3.3.1 High Voltage Tolerance and Large Current Handling Capability
The outstanding performance of IGBT in new energy vehicles is primarily due to its excellent voltage tolerance and large current handling capability:
1. High Voltage Tolerance:
– Automotive IGBT modules typically employ a 650V or 750V voltage tolerance design, meeting the high-voltage system requirements of most new energy vehicles
– With the popularization of 800V high-voltage platforms, IGBT modules with 1200V voltage tolerance have also begun to be applied, providing higher system efficiency and power density
2. Large Current Carrying Capability:
– IGBT can stably carry large currents of hundreds of amperes, meeting the high-power demands during motor startup and acceleration
– Advanced IGBT module designs can withstand higher peak currents, enhancing the vehicle’s acceleration performance and power output
3. Reliability Assurance:
– IGBT exhibits lower leakage current under high voltage, significantly enhancing system reliability and stability
– It can work stably in harsh environments such as high temperature and high voltage, meeting automotive reliability requirements

These characteristics enable IGBT to work stably in the high-voltage, high-current environment of new energy vehicles, providing reliable power output.

3.3.2 Low Conduction Resistance and Energy Saving Effect
IGBT’s low conduction resistance characteristic brings significant energy-saving effects to new energy vehicles:
1. Low Conduction Loss:
– IGBT’s conduction voltage drop is relatively low (typically 1-3V), resulting in lower conduction loss compared to other power devices
– When IGBT is in conduction state, low conduction resistance means lower power consumption during current flow, reducing energy waste in the form of heat
2. System Energy Efficiency Improvement:
– In electric drive systems, adopting IGBT can reduce overall system energy consumption by 10%~30%
– This not only lowers operating costs for users but also aligns with global energy-saving and emission reduction trends
3. Extended Range:
– Due to IGBT’s low conduction loss characteristic, vehicles can travel longer distances with the same amount of energy
– In practical applications, new energy vehicles equipped with advanced IGBT modules can achieve a 5%-10% increase in range

IGBT’s low conduction resistance characteristic is one of the key factors in achieving efficient energy utilization in new energy vehicles.

3.3.3 Fast Switching Speed and Precise Control
IGBT’s fast switching characteristic provides new energy vehicles with precise control capabilities:
1. Fast Switching Response:
– IGBT can complete switching actions within microseconds or even nanoseconds, quickly responding to control signals
– This fast response characteristic makes motor control more precise, improving vehicle handling performance and driving comfort
2. Precise Control Capability:
– IGBT’s fast switching characteristic allows for more precise control of motor speed and torque
– In electric vehicles, this means smoother acceleration and deceleration processes, as well as more precise energy recovery control
3. System Dynamic Performance:
– IGBT’s fast switching capability enhances system dynamic response speed, allowing vehicles to quickly adapt to different driving conditions
– In situations like rapid acceleration or emergency braking, IGBT can quickly adjust output to ensure vehicle safety and stability

These characteristics make IGBT a key component in achieving precise control and high-performance driving experiences in new energy vehicles.

3.4 Cost and Market Value of IGBT in New Energy Vehicles

3.4.1 IGBT’s Share in Total Vehicle Cost
IGBT is one of the highest-cost electronic components in new energy vehicles, and its share in total vehicle cost is significant:
1. Cost Structure Analysis:
– IGBT modules account for nearly 10% of the cost of electric vehicles and are core technical components in electric vehicles and charging stations
– IGBT accounts for about 50% of the motor drive system cost, while the motor drive system accounts for 15-20% of the total vehicle cost. This means IGBT accounts for about 7-10% of the total vehicle cost, making it the second largest cost component after batteries
2. Cost Differences in Different Models:
– A00/A0 level new energy vehicles have an IGBT value of 600-900 yuan
– 150,000 yuan models have an IGBT value of 1000-1300 yuan
– 200,000-300,000 yuan models have an IGBT value of 2000-2600 yuan
– High-end models have an IGBT value of 3000-3900 yuan
3. Impact of Electric Drive System Integration on Cost:
– Adopting a multi-in-one electric drive system design can reduce the number and cost of IGBT modules used
– For example, BYD’s “eight-in-one electric powertrain” achieves high integration, reducing system costs and weight

IGBT’s high cost characteristic makes it a key link in cost reduction for new energy vehicles and a focus area for domestic substitution.

3.4.2 Market Scale and Growth Trend of Automotive-grade IGBT
With the rapid growth of the new energy vehicle market, the automotive-grade IGBT market is experiencing explosive growth:
1. Rapid Market Scale Growth:
– Demand for automotive-grade IGBT modules is surging, with single-unit value exceeding 2000 yuan, and the market scale is expected to reach 33 billion yuan by 2025 (accounting for 55% of China’s IGBT market)
– In the new energy vehicle market, the penetration rate of superjunction IGBT modules has risen from 12% in 2020 to 38% in 2024, and is expected to exceed 50% by 2025
2. Demand Drivers:
– The continuous growth in new energy vehicle sales is the main driver of demand growth for automotive-grade IGBT
– Upgrades and integration trends in electric drive systems also increase demand for high-performance IGBT modules
– The popularization of 800V high-voltage platforms drives demand for higher-performance IGBT
3. Market Competition Landscape:
– The localization rate of IGBT in China increased to 43.7% in 2023, up 28 percentage points from 2020
– By 2025, China’s automotive-grade IGBT market is expected to form a tripartite competition pattern with international leaders, state-owned enterprises, and new car-making forces’ self-research systems

The rapid growth of the automotive-grade IGBT market provides significant development opportunities for Chinese companies and drives rapid progress in domestic IGBT technology.

4. Current Development Status and Technological Level of China’s IGBT Industry

4.1 Market Scale and Growth Trend of China’s IGBT Market

4.1.1 Market Scale and Structure Analysis
China has become the largest IGBT market globally, with the market scale continuing to grow rapidly:
1. Overall Market Scale:
– According to QYResearch, driven by the dual-carbon strategy and the new energy industry, China’s IGBT market scale is expected to exceed 60 billion yuan by 2025, with a compound annual growth rate of 18.7%
– In 2022, the global IGBT market scale reached 6.8 billion US dollars, and it is expected to reach 8 billion US dollars by 2025, with China being one of the fastest-growing markets globally
2. Market Structure Analysis:
– New Energy Vehicles: Demand for automotive-grade IGBT modules is surging, with the market scale expected to reach 33 billion yuan by 2025 (accounting for 55%)
– Photovoltaic and Energy Storage: The penetration rate of 1500V IGBT modules in inverters has increased to 75%, with the market scale expected to reach 15 billion yuan by 2025 (accounting for 25%)
– Industrial and Emerging Scenarios: Stable demand for 600~1200V IGBT in inverters and servo systems, combined with emerging fields such as humanoid robots, contributes the remaining 20% of the market scale
3. Product Structure Changes:
– Superjunction IGBT (SJ-IGBT) has become a core breakthrough in technological innovation in fields such as new energy vehicles and smart grids due to its excellent power density and low loss characteristics
– In the new energy vehicle market, the penetration rate of superjunction IGBT modules has risen from 12% in 2020 to 38% in 2024, and is expected to exceed 50% by 2025

The rapid growth of China’s IGBT market is mainly driven by strong demand in fields such as new energy vehicles and photovoltaic energy storage, and the market structure is continuously adjusting with changes in application fields.

4.1.2 China’s Global Position in the IGBT Market
China occupies an important position in the global IGBT market as the largest consumer market and an important manufacturing base:
1. Global Market Share:
– The Asia-Pacific region is expected to occupy the largest share of the global IGBT market in 2024, mainly due to the concentration of numerous electronic and semiconductor manufacturers in countries such as China, South Korea, and India
– China is especially expected to gain the largest revenue share, thanks to its leading position in the electric vehicle manufacturing field
2. Market Growth Contribution:
– The rapid growth of China’s IGBT market contributes the most to global market growth
– China’s leading position in the new energy vehicle field drives the rapid growth of demand for automotive IGBT, becoming the main driving force for the growth of the global IGBT market
3. Comparison with Other Markets:
– The US IGBT market scale is estimated to be 1.8 billion US dollars in 2024
– By 2030, China’s IGBT market scale is expected to reach 1.9 billion US dollars, with a compound annual growth rate of 10.3% from 2024 to 2030
– Growth rates in markets such as Japan and Canada are 8.5% and 8.1%, respectively, both lower than the Chinese market

China has become an important engine for global IGBT industry development, leading globally in market scale and growth speed.

4.2 Analysis of China’s IGBT Industry Chain Development

4.2.1 Industry Chain Structure and Localization Progress

China’s IGBT industry chain has initially formed, but there are still shortcomings in certain key links:
1. Industry Chain Structure:
– Upstream: Semiconductor materials, equipment, and design tools
– Midstream: Chip design, manufacturing, packaging, and testing
– Downstream: New energy vehicles, industrial control, consumer electronics, and other application fields
2. Localization Progress:
– In recent years, China’s IGBT production has increased rapidly, with production growing from 15.5 million units in 2019 to 39 million units in 2024, with a CAGR of 20.27%
– However, the overall self-sufficiency rate remains relatively low, at less than 35% in 2023, with a significant gap compared to market demand
3. Industry Chain Shortcomings:
– In terms of design tools, high-end EDA tools still rely mainly on imports
– In the manufacturing process, key equipment such as photolithography machines and ion implanters have an import dependency of over 75%
– On the raw materials side, high-performance epoxy plastic sealing materials and copper bonding wires are 80% dependent on Japanese suppliers

China’s IGBT industry chain localization progress is accelerating, but there are still “bottleneck” issues in key materials and equipment, requiring further strengthening of independent innovation.

4.2.2 Major Enterprises and Market Competition Landscape

China’s IGBT market competition landscape presents a diversified development trend, with domestic and international enterprises jointly participating in market competition:
1. Competition Landscape of International Manufacturers in China:
– Infineon occupies a dominant position, with a market share of 32.1% and 31.7% in discrete IGBT and IGBT module markets, respectively, in 2022
– International manufacturers such as Fuji Electric, Mitsubishi Electric, and ON Semiconductor also occupy certain shares in the Chinese market
– The localization rate of IGBT in China increased to 43.7% in 2023, up 28 percentage points from 2020
2. Major Domestic Enterprises:
– BYD Semiconductor: Leveraging group internal synergies, its market share jumped from 7.8% in 2020 to 19.5% in 2023
– StarPower Semiconductor: The automotive-grade FSTrench-type IGBT module it developed has entered the supply chain of BYD and Great Wall, with penetration in A-class models increasing to 27% in 2023
– Silan Microelectronics: The 12-inch line in Xiamen has achieved automotive-grade IGBT mass production, with power cycling capability reaching 40,000 cycles, and the product unit price is 30% lower than imported brands
– CRRC Times Electric: Relying on technology accumulation in the rail transit field, it developed a 750V reverse-conducting IGBT chip with a failure rate of less than 50ppm in electric buses
3. Market Share Change Trend:
– In 2023, international manufacturers such as Infineon, Fuji Electric, and Mitsubishi Electric still dominate the Chinese IGBT market
– Domestic enterprises such as BYD, StarPower Semiconductor, and CRRC Times Electric are rising rapidly, with market shares continuously increasing
– The share of domestic automotive-grade IGBT installations is expected to reach 28% in 2023 and may increase to 45% by 2025

China’s IGBT market competition landscape is undergoing profound changes, with the process of domestic substitution accelerating, but international manufacturers still dominate the high-end market.

4.3 Evaluation of China’s IGBT Technological Development Level

4.3.1 Technological Research and Innovation Progress

China has made significant progress in IGBT technology research and development, but there is still a gap compared to international advanced levels:
1. Technological Breakthroughs:
– In February 2025, a technological breakthrough was achieved in high-voltage flexible DC converter valves using fully domestically produced 6.5kV IGBT
– An appraisal and evaluation committee composed of 11 authoritative experts in the industry, including Academician Li Licheng of the Chinese Academy of Engineering, unanimously agreed that the overall performance of the product has reached international leading levels
– This marks the successful development of the world’s first 6.5kV/3kA IGBT flexible DC converter valve, achieving a breakthrough in the development of major Chinese equipment
2. Technological Innovation Directions:
– Superjunction IGBT technology: Achieves over 40% improvement in power density and 30% reduction in conduction loss through charge balance technology and advanced epitaxial growth processes
– Carrier storage layer structure: Effectively solves the contradiction between turn-off loss and conduction voltage drop by constructing a charge buffer layer between the p-type drain and n-type gate
– Floating p-column structure: Significantly improves drift region conductivity modulation efficiency by physically isolating the p-column and p-type base region
– Trench gate structure: By expanding the contact area between the gate and conductive region through three-dimensional gate design, gate capacitance is significantly reduced
3. Technological Gaps:
– International leading companies have a 3-5 year lead over domestic manufacturers in mass production of 12-inch IGBT, and there are still patent barriers in SiC chip trench gate technology to be overcome
– In design-end technical barriers, thermal management optimization and electromagnetic compatibility (EMC) design pose key challenges
– In the thin wafer processing stage of the manufacturing process, domestic enterprises generally adopt a 130μm thinning process, compared to Infineon’s mass-produced 70μm ultra-thin wafer processing technology, resulting in disadvantages in device volume and conduction loss

China has made significant progress in IGBT technology research and development, especially achieving important breakthroughs in high-voltage IGBT fields, but there is still a gap compared to international leading levels in high-end technology and mass production processes.

4.3.2 Comparison of Product Performance with International Levels

China’s IGBT product performance continues to improve, but there is still a gap compared to international leading levels:
1. Product Performance Comparison:
– Voltage Tolerance: International leading companies’ IGBT modules have voltage tolerance capabilities of up to 6500V, while mainstream domestic products generally have voltage tolerance capabilities below 4500V
– Switching Frequency: International leading companies’ products can reach 200kHz, while most domestic products are below 100kHz
– Thermal Efficiency: International leading companies’ IGBT chips have thermal efficiencies of up to 98%, while domestic products generally have efficiencies around 95%
– Conduction Loss: International leading companies’ conduction voltage drops are about 10%-15% lower than domestic similar products
2. Process Level Gap:
– Wafer Manufacturing: Although domestic enterprises have achieved independent control of 6-inch wafer production lines, high-yield 12-inch production lines have yet to be achieved, with average wafer yields currently only 65%-75%, significantly lower than foreign companies’ 90% yields
– Thin Wafer Processing: Domestic enterprises generally adopt a 130μm thinning process, compared to Infineon’s mass-produced 70μm ultra-thin wafer processing technology, resulting in disadvantages in device volume and conduction loss
– Packaging Technology: Domestic technology in high-reliability packaging technology still lags behind international leading levels, especially in the long-term reliability of automotive-grade IGBT modules
3. Design Capability Gap:
– In design-end technical barriers, thermal management optimization and electromagnetic compatibility (EMC) design pose key challenges
– Huada Jiutian’s Galaxy EDA tool has achieved localized technical breakthroughs in its thermal simulation module, with its proprietary algorithm reducing thermal resistance calculation errors to within 6%
– However, in the high-density power integration field, single-chip integration designs with over 2000A/cm² are still primarily reliant on international intellectual property licenses, resulting in a lag of 1-2 technological generations in product iteration speed compared to overseas leaders

China’s IGBT product performance is rapidly improving, with some high-end products approaching international advanced levels, but there is still a gap in overall technological levels and mass production capabilities compared to international leading companies.

4.3.3 Progress of Domestic Substitution and Market Penetration Rate

China’s IGBT domestic substitution process is accelerating, with market penetration rates continuously increasing:
1. Current Status of Domestic Substitution:
– In 2023, the market share of domestically produced IGBT reached approximately 30% (10% in 2018), with a target of exceeding 50% by 2025 (as planned by the Ministry of Industry and Information Technology)
– The localization rate of IGBT in China increased to 43.7% in 2023, up 28 percentage points from 2020
– The share of domestic automotive-grade IGBT installations is expected to reach 28% in 2023 and may increase to 45% by 2025
2. Key Areas for Domestic Substitution:
– Medium and Low-Voltage IGBT: Domestic substitution is progressing rapidly, with domestic enterprises expected to achieve a 60% market share in this field
– High-Voltage Module Market: Still dominated by foreign companies, but their share has decreased to 55%
– New Energy Vehicles: The market share of domestic IGBT in the new energy vehicle field increased from 5% in 2018 to 42% in 2025, reaching 58% in the photovoltaic inverter field
3. Challenges in Domestic Substitution:
– Technical Barriers: International leading companies have significant advantages in IGBT chip voltage tolerance, switching frequency, and thermal efficiency
– Industry Chain Shortcomings: There are still “bottleneck” issues in materials, equipment, and design tools
– International Competition: International manufacturers like Infineon and Fuji Electric strengthen market competition through price reductions and other strategies, squeezing the survival space of domestic manufacturers

China’s IGBT domestic substitution process is accelerating, but there are still significant challenges in high-end markets and key technology fields, requiring further strengthening of technological innovation and industry chain collaboration.

4.4 Analysis of China’s IGBT Industry Policy Environment

The Chinese government highly values the development of the IGBT industry and has introduced a series of policies to support IGBT technology research and industrial development:
1. National-level Policies:
– The “14th Five-Year Plan for Intelligent Manufacturing Development” clearly lists high-performance power semiconductors as a key development direction
– The Ministry of Industry and Information Technology’s “Action Plan for the Development of Basic Electronic Components Industry” explicitly requires that the self-sufficiency rate of key components exceed 50% by 2025
– The National Development and Reform Commission’s “Guiding Opinions on Expanding Investment in Strategic Emerging Industries and Cultivating New Growth Points and Growth Poles” proposes focusing on “bottleneck” issues in new energy equipment manufacturing and accelerating the research and development of core technical components such as IGBT
2. Local Government Policies:
– Local governments are building industrial clusters through the “chain leader system” (such as the SiC industry chain in Shenzhen and Wuxi) to accelerate the formation of a closed-loop ecosystem
– Localized procurement add-on policies for automotive chips (such as preferential licensing in Beijing and Shanghai) benefit domestic IGBT manufacturers
3. Industry Fund Support:
– In 2023, the second phase of the National Integrated Circuit Industry Investment Fund injected 2.5 billion yuan into Hua Hong Semiconductor to build an automotive-grade chip production line, with plans to achieve a monthly production capacity of 80,000 pieces of 8-inch IGBT wafers by 2025
– In 2023, there were 27 financing events in the IGBT field, with a total amount exceeding 8 billion yuan, of which financing for automotive-grade products accounted for 63%
4. Tax Incentive Policies:
– The “Several Policies for Promoting the High-Quality Development of the Integrated Circuit Industry and Software Industry in the New Era” clearly outlines tax incentives for integrated circuit manufacturing enterprises that meet conditions
– Integrated circuit manufacturing enterprises or projects encouraged by the state, with an operating period of 15 years or more, may be exempted or reduced from income tax

These policy measures provide strong support for the development of China’s IGBT industry, accelerating technological innovation and industrial upgrading, and promoting the process of domestic substitution.

5. Future Development Trends and Strategic Recommendations

5.1 Forecast of IGBT Technology Development Trends

5.1.1 Directions of Technological Innovation
IGBT technology is undergoing rapid iterations, and future development trends mainly focus on the following directions:
1. Continuous Evolution of Superjunction IGBT Technology:
– Superjunction IGBT (SJ-IGBT) will continue to lead technological development, further improving power density and reducing conduction loss through charge balance technology and advanced epitaxial growth processes
– It is expected that by 2025, the penetration rate of superjunction IGBT in the new energy vehicle market will exceed 50%, becoming the mainstream technical route
2. Structural Innovation and Performance Optimization:
– Carrier storage layer structure: Further optimize the balance between turn-off loss and conduction voltage drop by constructing a charge buffer layer between the p-type drain and n-type gate
– Floating p-column structure: Significantly improve drift region conductivity modulation efficiency by physically isolating the p-column and p-type base region
– Trench gate structure: Expand the contact area between the gate and conductive region through three-dimensional gate design, reducing gate capacitance
3. Material Innovation and Application Expansion:
– SiC-based IGBT Technology: Develop higher-performance IGBT devices by leveraging the excellent properties of SiC materials
– Hybrid design of SiC MOSFET and silicon-based IGBT: Combine the advantages of the two devices in the same module to optimize system performance
– Expansion of applications in high-temperature, high-frequency, and high-power density scenarios: Further expand the application range of IGBT
4. Intelligence and Integration:
– Intelligent IGBT modules: Integrate driver circuits, protection functions, and diagnostic functions, improving system integration and reliability
– Multi-chip integration technology: Integrate multiple IGBT chips and other functional chips into a single module, improving power density and system efficiency

Future IGBT technology will develop towards higher power density, lower loss, higher reliability, and stronger adaptability to meet the growing demand in fields such as new energy vehicles.

5.1.2 Paths for Enhancing Product Performance
Enhancing IGBT product performance is mainly achieved through the following paths:
1. Chip Design Optimization:
– Optimize device structure design to improve carrier mobility and lifetime
– Improve gate structure design to reduce gate charge and switching loss
– Optimize cell structure to enhance current density and power density
2. Process Technology Advances:
– Thin wafer processing technology: Develop from 130μm thinning process to 70μm ultra-thin wafer processing technology
– Advanced packaging technology: Adopt advanced packaging technologies such as copper wire bonding + silver sintering process to improve device lifespan and reliability
– Application of new materials: Use materials like aluminum nitride ceramic substrates to replace traditional alumina substrates, enhancing thermal performance
3. System-Level Optimization:
– Module design optimization: Improve thermal and electrical performance of modules by optimizing chip layout and thermal structure
– Drive and control strategy optimization: Improve efficiency and reliability of IGBT by refining drive circuits and control algorithms
– System integration optimization: Reduce system costs and improve efficiency through multi-in-one electric drive system design
4. Testing and Reliability Enhancement:
– Improve automotive-grade IGBT testing standards and processes
– Enhance product reliability under harsh environments such as high temperature, high voltage, and high humidity
– Strengthen long-term reliability assessment and lifespan prediction technologies

In the next five years, IGBT product power density is expected to increase by over 50%, conduction loss will decrease by over 30%, and switching speed will increase by over 20%, further enhancing energy efficiency and performance of new energy vehicles.

5.1.3 Competition and Integration with New Material Devices like SiC
In high-end application fields such as new energy vehicles, IGBT will face competition and integration with new power devices such as SiC MOSFETs:
1. Advantages and Challenges of SiC MOSFET:
– Advantages: SiC MOSFETs have higher switching frequencies (above 40kHz), lower switching losses, higher operating temperatures, and smaller sizes
– Challenges: SiC material costs are high, processes are complex, yields are low, and there are reliability challenges in high-voltage and high-current applications
2. Competitive Landscape between IGBT and SiC:
– Short-term (2025-2027): Imported IGBT modules still have a slight technical advantage in the mid-to-high-end market, but domestic SiC modules are accelerating penetration, and the market share of imported IGBT modules is shrinking year by year; domestic IGBT modules are fully replacing imported modules in the mid-to-low-end market
– Long-term (after 2030): As domestic SiC module technology matures and costs continue to decline, it will fully replace imported IGBT modules in fields such as new energy vehicles, photovoltaic inverters, and energy storage converters
3. Hybrid Applications and Integration Development:
– Hybrid design of silicon-based IGBT and SiC MOSFET: Combine the advantages of both devices in the same module to optimize system performance
– Division of high and low voltage application scenarios: IGBT is mainly used in medium and low voltage, large current scenarios, while SiC MOSFET is mainly used in high voltage, high frequency scenarios
– System-level optimization: Achieve optimal balance of system performance and cost through reasonable configuration of IGBT and SiC devices

In the next 5-10 years, IGBT will form a complementary relationship with new power devices such as SiC, playing their respective advantages in different application scenarios, and jointly promoting technological progress and industrial development in fields like new energy vehicles.

5.2 Strategic Recommendations for the Development of China’s IGBT Industry

5.2.1 Technological Research and Innovation Strategies
Based on the current status of China’s IGBT technology development, the following strategic recommendations are proposed:
1. Strengthen Core Technology Breakthroughs:
– Concentrate resources to overcome core technologies such as superjunction IGBT and trench gate structures, narrowing the gap with international leading levels
– Increase investment in research and development of cutting-edge technologies such as SiC-based IGBT to seize the technological high ground
– Establish a national-level IGBT technology innovation center to integrate industry-academia-research resources and collaboratively tackle key technical challenges
2. Enhance Process and Manufacturing Capabilities:
– Accelerate the construction of 12-inch IGBT wafer production lines to increase production capacity and yield
– Focus on overcoming key process technologies such as thin wafer processing and advanced packaging
– Strengthen the localization research and development of process equipment to reduce reliance on imported equipment
3. Improve Design Tools and Intellectual Property Systems:
– Support domestic EDA tool companies in developing specialized tools for IGBT design
– Strengthen the layout of core IGBT patents, especially in key areas such as device structures and process methods
– Establish an intellectual property sharing platform to promote technology exchange and cooperative innovation
4. Strengthen Talent Training and Introduction:
– Strengthen cooperation between universities and enterprises to cultivate professionals in the IGBT field
– Develop preferential policies to attract international high-end talents to return to China for entrepreneurship or work
– Establish and improve talent evaluation and incentive mechanisms to stimulate innovation vitality

Through these measures, China’s IGBT industry is expected to achieve leapfrog development in technological levels in the next 5-10 years, narrowing the gap with international leading levels.

5.2.2 Industry Chain Collaboration and Ecosystem Construction
Building a comprehensive, collaborative IGBT industry chain ecosystem is key to enhancing the competitiveness of China’s IGBT industry:
1. Industry Chain Upstream and Downstream Collaboration:
– Strengthen collaborative innovation across materials, equipment, design, manufacturing, packaging, and testing stages
– Establish strategic cooperation mechanisms among upstream and downstream enterprises in the industry chain to solve technical challenges together
– Promote vertical integration of upstream and downstream enterprises in the industry chain to improve resilience and efficiency
2. Industry Cluster Construction:
– Strengthen the construction of IGBT industry clusters in Beijing, Shanghai, Shenzhen, Wuxi, and other locations
– Create industry clusters integrating research and development, design, manufacturing, packaging, testing, and applications
– Support local governments in building specialized IGBT parks and providing policy and resource support
3. Application-End Collaborative Innovation:
– Strengthen cooperation between IGBT enterprises and application enterprises in fields such as new energy vehicles and photovoltaic energy storage
– Establish application demonstration platforms to promote technological innovation and application promotion
– Promote collaborative design and optimization of IGBT products with application systems
4. International Cooperation and Open Innovation:
– Strengthen technical cooperation and talent exchange with international leading enterprises
– Actively participate in international standard-setting to enhance international discourse power
– Encourage enterprises to “go global” to expand international markets and resources

By building a collaborative innovation industry ecosystem, China’s IGBT industry can better integrate resources, improve innovation efficiency, and accelerate technological progress and industrial upgrading.

5.2.3 Market Expansion and Domestic Substitution Strategies
Accelerating the process of domestic substitution and expanding market share is an important strategic goal for the development of China’s IGBT industry:
1. Differentiated Competition Strategy:
– Leverage cost and service advantages in the medium and low-voltage IGBT field to capture market share
– Concentrate resources to break through in high-voltage, high-frequency, and other high-end fields, gradually replacing imported products
– Develop distinctive products with independent intellectual property rights to avoid homogeneous competition
2. Application Field Expansion:
– Focus on expanding markets in strategic emerging industries such as new energy vehicles and photovoltaic energy storage
– Actively develop markets in traditional fields such as industrial control and smart grids
– Explore emerging application scenarios like humanoid robots and low-altitude economy
3. System Solution Provision:
– Transform from a single device supplier to a system solution provider
– Provide comprehensive solutions including IGBT modules, driver circuits, and control algorithms
– Strengthen strategic cooperation with vehicle manufacturers to provide customized products and services
4. International Market Development:
– Utilize China’s SiC capacity advantage (expected to account for over 60% of global capacity by 2025) to expand overseas markets
– The export growth rate of domestic IGBT modules exceeds 200%, with companies like Times Electric gradually entering international high-end supply chains
– Enhance international influence through technology export and brand building

Through these strategies, China’s IGBT industry is expected to achieve a 50% domestic substitution rate target by 2025 and occupy an important position in the global market by 2030.

5.3 Prospects for the Development of China’s IGBT Industry

Looking ahead, the development prospects of China’s IGBT industry are broad, but it also faces numerous challenges:
1. Continued Expansion of Market Scale:
– China’s IGBT market scale is expected to exceed 60 billion yuan by 2025, with a compound annual growth rate of 18.7%
– The new energy vehicle field will contribute the largest market share, expected to reach 33 billion yuan (accounting for 55%)
– The market scale of photovoltaic and energy storage fields is expected to reach 15 billion yuan (accounting for 25%), with industrial and emerging scenarios contributing the remaining 20% of the market scale
2. Rapid Improvement in Technological Levels:
– China’s gap with international leading levels in core technologies such as superjunction IGBT and trench gate structures will gradually narrow
– By 2030, the gap between China’s IGBT technological level and international leading levels is expected to narrow to 1-2 years
– Breakthroughs in domestic IGBT in high-voltage, high-frequency, and high-temperature high-end application fields will accelerate
3. Profound Changes in Industry Structure:
– The process of domestic substitution will accelerate, with domestic IGBT market share expected to exceed 50% by 2025
– The market competition landscape will form a tripartite pattern with international leaders, state-owned enterprises, and new car-making forces’ self-research systems
– Vertical and horizontal integration of the industry chain will accelerate, forming a batch of enterprise groups with international competitiveness
4. Gap with International Leading Levels:
– There will still be a certain gap between China and international leading levels in high-end products and core technologies
– International manufacturers still have advantages in intellectual property, brand influence, and global market layout
– Shortcomings in basic fields such as materials and equipment will still constrain industry development

Overall, the development prospects of China’s IGBT industry are broad, and under the multiple drivers of policy support, market demand, and technological innovation, China is expected to become an important force in the global IGBT industry in the next 5-10 years, providing strong support for the development of strategic emerging industries such as new energy vehicles.

6. Conclusion and Recommendations

6.1 Research Conclusions

This research conducted a comprehensive analysis of the application of IGBT in new energy vehicles and the current development status of China’s IGBT industry, yielding the following main conclusions:
1. IGBT Technical Principles and Application Advantages:
– As a voltage-controlled device, IGBT combines the efficient control advantages of MOSFETs with the high voltage tolerance and large current carrying capability of BJTs
– In new energy vehicles, IGBT, with its high voltage tolerance, large current handling capability, low conduction resistance, and fast switching characteristics, becomes a core component of the electric drive system
– IGBT plays an irreplaceable role in key links such as motor drive, energy recovery, and charging systems, directly impacting the energy efficiency and performance of new energy vehicles
2. Current Development Status of China’s IGBT Industry:
– Market scale is growing rapidly, expected to exceed 60 billion yuan by 2025, with a compound annual growth rate of 18.7%
– The process of domestic substitution is accelerating, with the localization rate increasing to 43.7% in 2023, up 28 percentage points from 2020
– The industry chain has initially formed, but there are still “bottleneck” issues in materials, equipment, and design tools
– The process of domestic substitution is accelerating, with the share of domestic automotive-grade IGBT installations expected to reach 28% in 2023 and may increase to 45% by 2025
3. Assessment of Technological Development Levels:
– China has made significant progress in IGBT technology research and development, with some high-end products approaching international advanced levels
– However, there is still a gap in core technologies, process levels, and design capabilities compared to international leading levels
– International leading companies still maintain a 3-5 year technological advantage in key technologies such as superjunction IGBT and trench gate structures
4. Future Development Trends:
– New technologies such as superjunction IGBT and SiC-based IGBT will drive continuous improvement in IGBT performance
– Modularization, intelligence, and integration will become important directions for IGBT product development
– IGBT will form a competitive and integrated pattern with new devices like SiC MOSFETs
– China’s IGBT industry is expected to achieve a 50% domestic substitution rate target by 2025 and occupy an important position in the global market

The development prospects of China’s IGBT industry are broad, but it also faces multiple challenges in technology, industry chain, and market. It requires joint efforts from the government, enterprises, and research institutions to promote high-quality industrial development.

6.2 Policy Recommendations

Based on the research conclusions, the following policy recommendations are proposed:
1. Strengthening Top-Level Design and Overall Planning:
– Formulate the “China IGBT Industry Development Plan (2025-2030),” clarifying development goals, key tasks, and safeguard measures
– Strengthen the coordination and synergy of industrial policies, science and technology policies, and fiscal and tax policies to form a policy synergy
– Establish a cross-departmental coordination mechanism to promote the development of the IGBT industry in a coordinated manner
2. Increasing Fiscal and Tax Financial Support:
– Increase fiscal investment in science and technology to support core IGBT technology breakthroughs and industrialization
– Improve tax incentive policies to reduce corporate burdens
– Guide financial institutions to increase credit support for IGBT enterprises
– Support qualified IGBT enterprises to list and finance and issue bonds
3. Improving Industry Chain Collaborative Innovation Mechanism:
– Establish a “industry-academia-research-application” collaborative innovation platform to promote the flow and integration of innovation elements
– Support upstream and downstream enterprises in the industry chain to form innovation alliances to solve technical problems together
– Promote the establishment of industry technology innovation alliances to facilitate technology exchange and resource sharing
4. Strengthening Talent Training and Introduction:
– Strengthen the construction of relevant disciplines in universities to cultivate professionals in the IGBT field
– Improve talent introduction policies to attract international high-end talents
– Establish and improve talent evaluation and incentive mechanisms to stimulate innovation vitality
– Support enterprises and universities in jointly training graduate students to strengthen industry-academia-research talent exchange
5. Strengthening International Cooperation and Open Innovation:
– Strengthen technical cooperation and talent exchange with international leading enterprises
– Support enterprises to participate in international standard-setting to enhance international discourse power
– Encourage enterprises to “go global” to expand international markets and resources
– Establish international cooperation platforms to promote technology introduction, digestion, absorption, and re-innovation

Through these policy measures, a favorable policy environment can be created for the development of China’s IGBT industry, accelerating technological breakthroughs and industrial upgrading, and promoting high-quality development of China’s IGBT industry.

6.3 Enterprise Development Recommendations

For Chinese IGBT enterprises, the following development recommendations are proposed:
1. Technological Innovation and Product Upgrading:
– Increase research and development investment, focusing on breaking through core technologies such as superjunction IGBT and trench gate structures
– Strengthen cooperation with universities and research institutes to enhance original innovation capabilities
– Accelerate product upgrading and iteration to improve product performance and reliability
– Plan forward-looking technologies such as SiC-based IGBT to seize technological high grounds
2. Industry Chain Integration and Collaboration:
– Strengthen strategic cooperation with upstream and downstream enterprises to build a collaborative innovation industry ecosystem
– Promote vertical integration to improve industry chain resilience and efficiency
– Participate in industry cluster construction to share resources and technologies
– Establish a global supply chain to reduce supply chain risks
3. Market Expansion and Brand Building:
– Deepen markets in key fields such as new energy vehicles and photovoltaic energy storage
– Actively explore markets in traditional fields such as industrial control and smart grids
– Explore emerging application scenarios like humanoid robots and low-altitude economy
– Strengthen brand building to enhance corporate visibility and reputation
4. Internationalization Strategy Implementation:
– Actively participate in international competition and expand overseas markets
– Strengthen international cooperation to introduce advanced technologies and management experiences
– Enhance international influence through technology export and brand building
– Establish overseas research and development centers and production bases to accelerate internationalization layout
5. Talent Training and Team Building:
– Strengthen the construction of core technical teams, cultivating and introducing high-end talents
– Establish and improve talent incentive mechanisms to stimulate innovation vitality
– Strengthen corporate culture construction to create an innovative atmosphere
– Conduct industry-academia-research cooperation to cultivate professionals

Through these measures, Chinese IGBT enterprises can enhance core competitiveness, accelerate technological breakthroughs and market expansion, and gain greater development space in fierce international competition.